Title :
Structural and electrical characteristics of Al-doped TiO2 high-k gate dielectric grown by atomic layer deposition
Author :
Zhang-Yi Xie ; Yang Geng ; Zhi-Yuan Ye ; Qing-Qing Sun ; Peng-Fei Wang ; Hong-Liang Lu ; Zhang, De-Wei
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Al-doped TiO2 thin films grown on Si(100) by atomic layer deposition has been investigated as a potential high dielectric constant insulator in the application of microelectronics. The film thickness is determined by spectroscopy ellipsometry and transmission electron microscopy. X-ray photoelectron spectrometry is used to characterize the chemical composition and bonding states. The relative permittivity (k) determined by C-V measurement is 14.6. Moreover, ultralow hysteresis of C-V curves has been demonstrated for the Al-doped TiO2 film with few instable-trapped charges.
Keywords :
X-ray spectroscopy; aluminium; atomic layer deposition; electron traps; ellipsometry; high-k dielectric thin films; hysteresis; permittivity; photoelectron spectroscopy; semiconductor doping; semiconductor thin films; titanium compounds; transmission electron microscopy; C-V curve; C-V measurement; TiO2:Al; X-ray photoelectron spectrometry; atomic layer deposition; bonding state; chemical composition; electrical characteristics; film thickness; high dielectric constant insulator; high-k gate dielectric; instable-trapped charges; microelectronics; relative permittivity; spectroscopy ellipsometry; structural characteristics; thin film; transmission electron microscopy; ultralow hysteresis; Aluminum oxide; Capacitance-voltage characteristics; Chemicals; Dielectrics; Films; Permittivity measurement; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467639
