Title :
1200V class reverse blocking IGBT (RB-IGBT) for AC matrix converter
Author :
Takahashi, Hideki ; Kaneda, Mitsuru ; Minato, Tadaham
Author_Institution :
Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
This paper presents a novel 1200 V RB-IGBT for an AC matrix converter. The 1200 V RB-IGBT is made by a deep diffusion isolation process and thin wafer process technology. Our fabricated RB-IGBT achieved more than 1200 V reverse blocking capability and the same forward voltage drop Vce(sat) and turn-off energy loss Eoff characteristics as our previous punch through type (PT-type) third generation IGBT. Therefore, it is possible to reduce the total loss in the AC matrix converter operation compared with the conventional IGBT and diode coupling.
Keywords :
AC-AC power convertors; insulated gate bipolar transistors; matrix convertors; power bipolar transistors; 1200 V; AC matrix converter; RB-IGBT; class reverse blocking IGBT; deep diffusion isolation process; forward voltage drop; turn-off energy loss; wafer process technology; AC-AC power conversion; Insulated gate bipolar transistors; Power bipolar transistors;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332877
