Title :
Electrical characterization of ultra thin HfO2/Al2O3/HfO2 triple-layer gate dielectrics for advanced MIS capacitors
Author :
Yang-Hua Chang ; Kai-Yuan Fang ; Cheng-Li Lin
Author_Institution :
Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Douliou, Taiwan
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Ultra thin HfO2/Al2O3/HfO2 triple-layer gate dielectrics for advanced MIS capacitors have been characterized electrically. The triple-layer gate stacks after post-metal annealing (PMA) at various temperatures have been studied. Experimental results including leakage current, C-V characteristics, and TDDB are presented in this paper. It has been found that the addition of Al2O3 into HfO2 increases the crystallization temperature of the gate dielectric, and thus reduces the leakage current. The best overall characteristics were obtained by applying PMA at 600 °C.
Keywords :
MIS capacitors; aluminium compounds; annealing; dielectric materials; hafnium compounds; leakage currents; C-V characteristics; HfO2-Al2O3-HfO2; advanced MIS capacitors; crystallization temperature; electrical characterization; leakage current; post-metal annealing; temperature 600 C; triple-layer gate stacks; ultra thin triple-layer gate dielectrics; Aluminum oxide; Capacitors; Crystallization; Hafnium compounds; Leakage current; Logic gates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467642
