DocumentCode :
3416330
Title :
Stress-induced effects in PLZT ceramics
Author :
Haertling, Gene H.
Author_Institution :
Gilbert C. Robinson Dept. of Ceramic Eng., Clemson Univ., SC, USA
Volume :
1
fYear :
1996
fDate :
18-21 Aug 1996
Firstpage :
65
Abstract :
Soft, high lead-containing ferroelectric ceramic materials such as PLZT are known to be highly vulnerable to the effects of mechanical stress at room and elevated temperatures as a consequence of their ferroelastic and pyroplastic natures which are usually manifested in some form of nonlinear behaviour within the material. Examples of such behaviour include: (1) hydrostatic and shock-wave stimulated structural phase transformations as in stress-induced depoling of explosive-to-electrical (EET) transducers, (2) mechanically stimulated domain reorientation as in shape memory effects and Rainbow de,ices, (3) mechanically stimulated electrooptic effects as in ferroelectric picture (Ferpic) devices and Rainbows, (4) mechanically stimulated strength effects and (5) thermo-mechanically stimulated dimensional changes as in high temperature creep. The improved utility or increased sensitivity of these materials as a result of stress-enhancing techniques is described
Keywords :
ferroelectric materials; lanthanum compounds; lead compounds; piezoceramics; stress effects; Ferpic; PLZT; PbLaZrO3TiO3; Rainbow device; depoling; domain reorientation; electrooptic effect; explosive-to-electrical transducer; ferroelastic material; ferroelectric picture device; high temperature creep; hydrostatic pressure; mechanical stress; nonlinearity; pyroplastic material; shape memory effect; shock wave; soft ferroelectric ceramic; strength; structural phase transformation; thermomechanical effect; Capacitive sensors; Ceramics; Creep; Ferroelectric materials; Internal stresses; Mechanical factors; Piezoelectric materials; Piezoelectric polarization; Temperature; Transducers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
Type :
conf
DOI :
10.1109/ISAF.1996.602712
Filename :
602712
Link To Document :
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