Title :
Novel ferroelectric epitaxial (Ba,Sr)TiO/sub 3/ capacitor for deep sub-micron memory applications
Author :
Kawakubo, T. ; Abe, K. ; Komatsu, S. ; Sano, K. ; Yanase, N. ; Mochizuki, H.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A novel ferroelectric capacitor cell was developed using a (Sa,Sr)TiO/sub 3/ (BST) heteroepitaxial technique on Si substrate. Strong ferroelectricity results from the c-axis being elongated due to lattice mismatch between the dielectric and electrode. The epitaxial BST capacitor showed strong ferroelectricity even at 30 nm thickness, which is the thinnest ferroelectric film so far. Its superior ferroelectric properties, reliability, and sub-micron silicon process compatibility were confirmed.
Keywords :
barium compounds; epitaxial layers; ferroelectric capacitors; ferroelectric storage; strontium compounds; (BaSr)TiO/sub 3/; BST heteroepitaxial layer; Si substrate; deep submicron memory; ferroelectric epitaxial capacitor; lattice mismatch; reliability; Binary search trees; Capacitors; Crystalline materials; Dielectric thin films; Electrodes; Ferroelectric films; Ferroelectric materials; Lattices; Polarization; Temperature;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554076
