DocumentCode
3416396
Title
Novel ferroelectric epitaxial (Ba,Sr)TiO/sub 3/ capacitor for deep sub-micron memory applications
Author
Kawakubo, T. ; Abe, K. ; Komatsu, S. ; Sano, K. ; Yanase, N. ; Mochizuki, H.
Author_Institution
Toshiba Corp., Kawasaki, Japan
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
695
Lastpage
698
Abstract
A novel ferroelectric capacitor cell was developed using a (Sa,Sr)TiO/sub 3/ (BST) heteroepitaxial technique on Si substrate. Strong ferroelectricity results from the c-axis being elongated due to lattice mismatch between the dielectric and electrode. The epitaxial BST capacitor showed strong ferroelectricity even at 30 nm thickness, which is the thinnest ferroelectric film so far. Its superior ferroelectric properties, reliability, and sub-micron silicon process compatibility were confirmed.
Keywords
barium compounds; epitaxial layers; ferroelectric capacitors; ferroelectric storage; strontium compounds; (BaSr)TiO/sub 3/; BST heteroepitaxial layer; Si substrate; deep submicron memory; ferroelectric epitaxial capacitor; lattice mismatch; reliability; Binary search trees; Capacitors; Crystalline materials; Dielectric thin films; Electrodes; Ferroelectric films; Ferroelectric materials; Lattices; Polarization; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.554076
Filename
554076
Link To Document