Title :
Intrinsic dependence of intermodulation distortion in HEMTs
Author :
Qu, Guoli ; Parker, Anthony E. ; Zhang, Guangchun
Author_Institution :
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Abstract :
This paper analyses the intrinsic (the Taylor series coefficients) dependence of intermodulation distortion in HEMT (high electron mobility transistors) amplifiers. This analysis is very helpful for understanding the bias dependence of IM distortion since it critically depends on the bias dependence of Taylor series coefficients.
Keywords :
HEMT circuits; amplifiers; intermodulation distortion; HEMT amplifiers; Taylor series coefficients; bias dependence; high electron mobility transistors; intermodulation distortion; microwave transistors; Frequency; HEMTs; Intermodulation distortion; MODFETs; Microwave devices; Microwave transistors; Photovoltaic systems; Solar power generation; Taylor series; Voltage; HEMTs; Intermodulation distortion; Microwave transistors;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1607025
