Title :
Multi-parameter model for HCI lifetime prediction
Author :
Lijuan Ma ; Zhaoxing Chen ; Xiao-Li Ji ; Feng Yan ; Yi Shi
Author_Institution :
Sch. of Electron. Sci. & Eng., Nanjing Univ., Nanjing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Hot carriers injection (HCI) degradation is a key reliability problem for MOSFET devices. HCI lifetime dependents on the channel length (L), applied drain voltage (Vd) and temperature (T). In this study, we construct a multi-parameters (L, Vd, T) model for HCI lifetime prediction for 45nm nMOSFETs. These experimental parameters successfully provide the lifetime prediction based on operation conditions of voltage, length, frequency, heat for 45nm nMOSFET products.
Keywords :
MOSFET; carrier lifetime; hot carriers; semiconductor device models; semiconductor device reliability; HCI degradation; HCI lifetime dependents; HCI lifetime prediction; MOSFET device; channel length; drain voltage; hot carriers injection; multiparameter model; nMOSFET product; reliability problem; size 45 nm; temperature; Acceleration; Degradation; Human computer interaction; MOSFETs; Predictive models; Semiconductor device modeling; Stress; Hot Carriers Injection; Lifetime Prediction; Multi-parameter Model; Worst Case Condition;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467651
