Multi-voltage SOI-BiCDMOS for 14V&42V automotive applications

Author

Kawai, Fumiaki ; Onishi, Tom ; Kamiya, Takumi ; Ishimabushi, Hisashi ; Eguchi, Hiroomi ; Nakaharna ; Aoki, Hirofumi ; Hamada, Kimimori

Author_Institution

Toyota Motor Corp., Aichi, Japan

fYear

2004

fDate

24-27 May 2004

Firstpage

165

Lastpage

168

Abstract

This paper presents a new multi-voltage SOI-BiCDMOS, which particularly focuses on "power MOSFET and BJT rich automotive applications". This technology can integrate Nch LDMOS and Pch LDMOS which have 35 V/60 V/80 V breakdown voltages, high packing density deep trench isolated BJTs, and a low cost 0.8 μm CMOS, on a single chip. The six types of LDMOS can be simultaneously fabricated with only two additional masks to a CMOS process, and these LDMOSs satisfy both low specific on-resistance and good SOA. Furthermore, in this technology, a bonded SOI wafer with 200 mm diameter has been newly adopted in order to reduce chip cost.

Keywords

BiCMOS integrated circuits; automotive electronics; isolation technology; power MOSFET; power bipolar transistors; power integrated circuits; semiconductor device breakdown; silicon-on-insulator; 0.8 micron; 14 V; 200 mm; 35 V; 42 V; 60 V; 80 V; CMOS; N-channel LDMOS on-resistance; P-channel LDMOS; SOA; automotive IC; bonded SOI wafer; high packing density deep trench isolation; multiple-voltage SOI-BiCDMOS; power BJT; power MOSFET breakdown voltage; BiCMOS integrated circuits; Isolation technology; Power MOSFETs; Power bipolar transistors; Power integrated circuits; Road vehicle electronics; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332891

Filename

1332891