The relation between the resistivity of the drain-line/pixel-electrode contact and SiN deposition condition

At the contact between drain-line(metal) and pixel-electrode (ITO), the metal contacts with the ITO film through the hole of the SiN film. ITO film is exposed to plasma during the SiN deposition. The extent of the damage of ITO surface by plasma exposure changes with the condition of SiN deposition. In this work, we have investigated the relation between the resistivity of the drain-line/pixel-electrode (DL/PE) contact and SiN deposition condition. It is found that the resistivity of the DUPE contact depends on the deposition temperature. The mechanism of contact resistivity´s dependence on the SiN deposition temperature is presumably related to the formation of SiOx and the segregation of indium on SiOx at the SiN/ITO interface