Title :
High density, low on-resistance, high side N-channel trench lateral power MOSFET with thick copper metal
Author :
Sawada, M. ; Sugi, A. ; Iwaya, M. ; Takagiwa, K. ; Matsunaga, S. ; Kajiwara, S. ; Mochizuki, K. ; Fujishima, N.
Author_Institution :
Device Technol. Lab., Fuji Electr. Adv. Technol. Co., Ltd, Nagano, Japan
Abstract :
We proposed a low side N-channel trench lateral power MOSFET (TLPM) in (N.Fujishima et al, Proc. of IEDM 2002, p.455-458). In this paper, a high side N-channel TLPM, which is isolated from the substrate, is proposed, fabricated and characterized for the first time. The fabricated high side TLPM devices exhibit a specific on-resistance of 17 mΩ-mm2 with a breakdown voltage of 21 V.
Keywords :
copper; power MOSFET; semiconductor device breakdown; semiconductor device metallisation; 21 V; Cu; breakdown voltage; device specific on-resistance; high density MOSFET; high side N-channel trench lateral power MOSFET; low on-resistance MOSFET; substrate isolated TLPM; thick copper metallization; Copper; Power MOSFETs; Semiconductor device metallization;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332893
