Title :
Performance improvement by stack structure in flexible resistive random access memory
Author :
Run-chen Fang ; Wen Yang ; Qing-Qing Sun ; Peng Zhou ; Peng-Fei Wang ; Zhang, David Wei
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Resistive random access memory (RRAM) has been widely investigated. However, for the applications in flexible electronics, this type of memory is not so widely investigated for its requirement of the low processing temperature. In this paper, we demonstrated an Al2O3-based FRRAM fabricated under low temperature, and improved its performance by utilizing Al2O3/HfO2 functional stack.
Keywords :
aluminium compounds; flexible electronics; hafnium compounds; random-access storage; Al2O3-HfO2; FRRAM; flexible electronics; flexible resistive random access memory; low temperature fabrication; performance improvement; stack structure; Aluminum oxide; Flexible electronics; Hafnium compounds; Resistance; Switches; Temperature; Temperature measurement; Aluminum oxide; FRRAM; Hafnium oxide; High uniformity; LTALD;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467657
