• DocumentCode
    3416588
  • Title

    High performance multilevel data storage in TaTiN/HfOx/Pt based RRAM using bipolar and unipolar combined switching mode

  • Author

    Bing Chen ; Ye Xin Deng ; Bin Gao ; Rui Liu ; Long Ma ; Peng Huang ; Fei Fei Zhang ; Li Feng Liu ; Xiao Yan Liu ; Jin Feng Kang

  • Author_Institution
    Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, we present a novel co-existed bipolar/unipolar RRAM for high performance multilevel memory application. Good multilevel data storage characteristics are obtained in this TaTiN/HfOx/Pt based RRAM. Furthermore, based on switching characteristics of this RRAM, a novel operation mode is proposed to simplify the multilevel operation and optimize the device characteristics.
  • Keywords
    hafnium compounds; platinum; random-access storage; tantalum compounds; titanium compounds; RRAM; TaTiN-HfOx-Pt; bipolar combined switching mode; device characteristics; high performance multilevel memory application; multilevel data storage; multilevel operation; operation mode; switching characteristics; unipolar combined switching mode; Electrodes; Hafnium compounds; Ions; Memory; Resistance; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6467658
  • Filename
    6467658
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3416588