Title :
High performance multilevel data storage in TaTiN/HfOx/Pt based RRAM using bipolar and unipolar combined switching mode
Author :
Bing Chen ; Ye Xin Deng ; Bin Gao ; Rui Liu ; Long Ma ; Peng Huang ; Fei Fei Zhang ; Li Feng Liu ; Xiao Yan Liu ; Jin Feng Kang
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In this paper, we present a novel co-existed bipolar/unipolar RRAM for high performance multilevel memory application. Good multilevel data storage characteristics are obtained in this TaTiN/HfOx/Pt based RRAM. Furthermore, based on switching characteristics of this RRAM, a novel operation mode is proposed to simplify the multilevel operation and optimize the device characteristics.
Keywords :
hafnium compounds; platinum; random-access storage; tantalum compounds; titanium compounds; RRAM; TaTiN-HfOx-Pt; bipolar combined switching mode; device characteristics; high performance multilevel memory application; multilevel data storage; multilevel operation; operation mode; switching characteristics; unipolar combined switching mode; Electrodes; Hafnium compounds; Ions; Memory; Resistance; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467658
