Title :
Low temperature processed poly-Si thin-film transistors with thinner LPD-SiO2 as gate insulator and its reliability
Author :
Fan, Ching-Lin ; Yeh, Ching-Fa ; Hsiung-Kuang Tsai ; Lur, Water ; Yen, Po-Wen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The 10 nm-thick LPD-SiO2 has been developed and applied as gate oxide to the low-temperature processed poly-Si TFTs with small geometry. The TFT´s have large driving current, small threshold voltage, and small subthreshold swing. The reliability of the devices are also studied
Keywords :
liquid crystal displays; semiconductor device reliability; semiconductor growth; silicon; silicon compounds; thin film transistors; 10 nm; LPD-SiO2; Si-SiO2; TFT; gate insulator; liquid phase deposition; polysilicon thin-film transistors; reliability; subthreshold swing; threshold voltage; Electronics industry; Geometry; Industrial electronics; Insulation; Microelectronics; Reliability engineering; Stability; Temperature; Thin film transistors; Threshold voltage;
Conference_Titel :
Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., Second International Workshop on
Conference_Location :
Bethlehem, PA
Print_ISBN :
0-7803-3056-0
DOI :
10.1109/AMLCD.1995.540966
