Forward transient behavior of PiN and super junction diodes

It is known that the forward transient behavior of the diode has adverse effects like power losses and noise problems on switching power supplies. However, only a few attempts have been made to analyze the forward transient behavior, in contrast to the vigorous research activity in the reverse recovery process. In this study, the forward transient behavior of pin diodes is investigated and the effects of lifetime, doping concentration and thickness of each region of the diode on peak forward recovery voltage and forward recovery time are shown for the first time. Moreover, we demonstrate with simulated and measured results that the super junction diodes have significantly improved forward recovery characteristics.