Title :
Oxide based memristive devices
Author :
Yang, Jie J. ; Zhang, Min-Xia ; Feng Miao ; Strachan, John Paul ; Torrezan, A.C. ; Pickett, Matthew D. ; Wei Yi ; Byung Joon Choi ; Nickel, J.H. ; Medeiros-Ribeiro, G. ; Williams, R.S.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Memristive devices with fast speed, low-energy, high endurance and small footprint have attracted significant attention recently. In this article, we first briefly introduce the switching mechanisms and then discuss possible applications with these devices, including memory, logic and neuromorphic computing. Finally, the promises and challenges of these devices are discussed, together with some possible solutions.
Keywords :
logic circuits; memristors; random-access storage; fast speed; high endurance; logic computing; low-energy; memory computing; neuromorphic computing; oxide based memristive devices; small footprint; switching mechanisms; CMOS integrated circuits; Electrodes; Materials; Memristors; Resistance; Switches; Switching circuits;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467661
