Trench gate power MOSFETs with retrograde body profile

Author

Tsui, Bing-Yue ; Wu, Mmg-Da ; Gan, Tian-Choy ; Chou, Hui-Hua ; Wu, Zhi-Liang ; Sune, Ching-Tzong

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2004

fDate

24-27 May 2004

Firstpage

213

Lastpage

216

Abstract

Low specific on-resistance (R_ds,on) and low gate capacitance are essential for trench gate power MOSFETs. In this work, we propose a simple method of retrograde body profile to improve the two parameters simultaneously. The retrograde body MOSFET (RBMOS) is realized by high energy implantation. Because the highest channel concentration is located close to the drain side, the depletion width at the drain side is suppressed, so that the channel length can be shortened greatly without sacrificing punch-through voltage. A low thermal budget and easy trench gate process are additional benefits. A power MOSFET with channel length of 0.4 μm, threshold voltage of 1 V, and breakdown voltage of 32 V is demonstrated. Compared with the conventional device, the specific on-resistance and the figure-of-merit can be improved by 38% and 70%, respectively.

Keywords

doping profiles; ion implantation; power MOSFET; semiconductor device breakdown; 0.4 micron; 1 V; 32 V; RBMOS; breakdown voltage; channel length shortening; doping profile; drain side channel doping concentration; drain side depletion width; figure-of-merit; high energy ion-implantation; low gate capacitance; low specific on-resistance; low thermal budget; punch-through voltage; retrograde body profile MOSFET; threshold voltage; trench gate power MOSFET; trench gate process; Ion implantation; Power MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332903

Filename

1332903