DocumentCode
3416717
Title
The influence of body effect and threshold voltage reduction on trench MOSFET body diode characteristics
Author
Dolny, G.M. ; Sapp, S. ; Elbanhaway, A. ; Wheatley, C.F.
Author_Institution
Fairchild Semicond., Mountaintop, PA, USA
fYear
2004
fDate
24-27 May 2004
Firstpage
217
Lastpage
220
Abstract
This paper presents a comprehensive study of the body diode characteristics of high-channel density trench power MOSFETs using analytic modeling, 2-dimensional numerical simulation, and physical measurements. The results show that, for state-of-the-art trench MOSFETs, the body diode characteristics are strongly influenced by majority carriers in the channel due to gate-controlled third quadrant conduction. This large channel current is shown to be the result of dynamic threshold voltage lowering due to the MOSFET body effect.
Keywords
power MOSFET; semiconductor device models; 2D numerical simulation; MOSFET body effect; analytic modeling; channel current; channel majority carriers; dynamic threshold voltage lowering; gate-controlled third quadrant conduction; high-channel density power MOSFET; threshold voltage reduction; trench MOSFET body diode characteristics; Power MOSFETs; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN
4-88686-060-5
Type
conf
DOI
10.1109/ISPSD.2004.1332904
Filename
1332904
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