Title :
A study of STI stress impact on DC performance of nano-scale NMOS
Author :
Yun-Juan Yu ; Wen-Jun Li ; Xia Fang
Author_Institution :
Key Lab. for RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
This work investigates the impact of STIW (the width of shallow-trench-isolation) on DC behavior of nano-scale device. Based on theoretical analysis, several devices with different STIW and fingers based on 65nm CMOS process were designed. The test results prove that it is very important to consider the influence of STIW especially for threshold voltage model of nano-scale device with one finger.
Keywords :
CMOS integrated circuits; MOSFET; stress analysis; CMOS process; DC performance behaviour; STI stress impact; STIW; nanoscale NMOS device; shallow-trench-isolation width; size 65 nm; threshold voltage model; CMOS integrated circuits; CMOS process; Fingers; Layout; MOS devices; Semiconductor device modeling; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467669
