Design of an RF LDMOSFET with deep drift and hot carrier immunity using time domain approach

An advanced RF LDMOSFET technology that incorporates a new deep drift region is presented. The deep drift region does not require any additional masking stage but exhibits significant benefits in terms of hot carrier related bias drift and process tolerance. The impact of the design is simulated under RF bias conditions using a novel time-domain approach. In contrast with large signal modelling, the time domain simulation can directly correlate RF performance to device and process technology. The simulation method avoids the need for fabrication prior to RF evaluation, with obvious benefits of shortening the device design cycle.