Physically based simulation of strong charge multiplication events in power devices triggered by incident ions

Author

Kaindl, W. ; Sölkner, G. ; Becker, H.W. ; Meijer, J. ; Schulze, H.J. ; Wachutka, G.

Author_Institution

Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Germany

fYear

2004

fDate

24-27 May 2004

Firstpage

257

Lastpage

260

Abstract

Non-destructive ion irradiation experiments and corresponding device simulations were performed in order to investigate the radiation sensitivity of different device structures. We modeled an irradiation experiment in which a high power diode is exposed to ⁸⁴Kr, ²⁸Si, and ¹²C-ions in order to validate and calibrate the simulation models. Device simulations reveal spatial and temporal distributions of electric field and carrier densities occurring in the interior of the device. Therefore, they help to identify and explain the mechanism of strong charge multiplication induced by incident ions.

Keywords

carrier density; cosmic rays; power semiconductor devices; radiation effects; semiconductor device models; C; Kr; Si; carrier density distribution; charge multiplication events; cosmic radiation; device structure radiation sensitivity; electric field spatial/temporal distribution; incident ion triggered events; ion irradiation; power devices; Charge carrier density; Cosmic rays; Power semiconductor devices; Radiation effects; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332914

Filename

1332914