Title :
An 800V integrated DMOS-IGBT/PiN or MPS-rectifier power device
Author :
Natarajan, R. ; Varadarajan ; Hitchcock, C. ; Chow, T.P.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A novel power device that integrates a non-punchthrough DMOS insulated gate bipolar transistor with a fast-switching, anti-parallel PiN or merged pin Schottky (MPS) rectifier is proposed and experimentally demonstrated. Integration of the anti-parallel rectifier within the power switch reduces cost, component-count and packaging parasitic of the power module. Device integration is achieved through side-by-side placement of the IGBT and PiN/MPS rectifier in the same die with both devices sharing common terminals. Experimental characteristics of the fabricated designs indicate successful device integration with competitive IGBT and diode performance in the integrated device, as compared to discrete devices. Improved reverse recovery performance of the antiparallel rectifier is evident from 30% reduction in reverse peak current and 45% reduction in reverse recovery charge due to the MPS structure as compared to a PiN.
Keywords :
Schottky diodes; insulated gate bipolar transistors; p-i-n diodes; power MOSFET; solid-state rectifiers; 800 V; MPS rectifier; anti-parallel merged pin Schottky rectifier; fast-switching PiN rectifier; insulated gate bipolar transistor; integrated DMOS-IGBT/rectifier power device; nonpunchthrough DMOS IGBT; power module packaging parasitic; power switch; reverse peak current reduction; reverse recovery charge reduction; reverse recovery performance; Insulated gate bipolar transistors; Power MOSFETs; Schottky diodes; Solid state rectifiers; p-i-n diodes;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332915
