A new compact high dI/dt gate drive unit for 6-inch GCTs [gate commutated turn-off thyristor]

Author

Gruening, H. ; Koyanagi, K.

Author_Institution

Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Amagasaki City, Japan

fYear

2004

fDate

24-27 May 2004

Firstpage

265

Lastpage

268

Abstract

A gate driver applying a ring of ceramic chip capacitors and MOSFETs around a GCT is presented, achieving unprecedented circular homogeneity of gate turn-off current and gate dI/dt-capability (>35kA/μs). A fast charger is added to reset the capacitor\´s voltage within less than 150 μs after every GCT turn-off process. The turn-off current capability of 6 kV 6-inch asymmetric GCTs and 6 kV 6-inch reverse conducting GCTs is investigated with the new gate driver and compared to that achieved under traditional gate drive. Turnoff current capability improvement by x is observed with the new gate driver, wherein 18%\n\n\t\t

Keywords

ceramic capacitors; driver circuits; power MOSFET; thyristors; 150 mus; 6 inch; 6 kV; MOSFET; asymmetric GCT turn-off process; capacitor voltage resetting fast charger; ceramic chip capacitors; dI/dt gate drive unit; gate commutated turn-off thyristor; gate turn-off current circular homogeneity; reverse conducting GCT; turn-off current capability; Ceramic capacitors; Driver circuits; Power MOSFETs; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332916

Filename

1332916