Title :
Formation and movement of voids in copper interconnect structures
Author :
de Orio, R.L. ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Electromigration (EM) is one of the main reliability concerns in copper interconnects. In particular, it is a critical issue for new emerging technologies, such as through silicon via (TSV) technology. In this work the impact of formation and growth of voids under a TSV located at the cathode end of a typical dual-damascene line is analyzed. The resistance change of the structure is numerically simulated and modeled. It is shown that there exist two modes of resistance development caused by large and small voids.
Keywords :
copper; electromigration; integrated circuit interconnections; integrated circuit reliability; three-dimensional integrated circuits; voids (solid); Cu; TSV technology; cathode end; copper interconnect structures; electromigration; reliability; resistance change; through silicon via technology; typical dual-damascene line; void formation; void movement; Conductivity; Copper; Numerical models; Numerical simulation; Reliability; Resistance; Through-silicon vias;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467675
