Formation and movement of voids in copper interconnect structures

Author

de Orio, R.L. ; Selberherr, Siegfried

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

4

Abstract

Electromigration (EM) is one of the main reliability concerns in copper interconnects. In particular, it is a critical issue for new emerging technologies, such as through silicon via (TSV) technology. In this work the impact of formation and growth of voids under a TSV located at the cathode end of a typical dual-damascene line is analyzed. The resistance change of the structure is numerically simulated and modeled. It is shown that there exist two modes of resistance development caused by large and small voids.

Keywords

copper; electromigration; integrated circuit interconnections; integrated circuit reliability; three-dimensional integrated circuits; voids (solid); Cu; TSV technology; cathode end; copper interconnect structures; electromigration; reliability; resistance change; through silicon via technology; typical dual-damascene line; void formation; void movement; Conductivity; Copper; Numerical models; Numerical simulation; Reliability; Resistance; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467675

Filename

6467675