Title :
Influence of the design parameters on the performance of 1.7 kV, NPT, planar clustered insulated gate bipolar transistor (CIGBT)
Author :
Vershinin, K. ; Sweet, M. ; Spulber, O. ; Hardikar, S. ; Luther-King, N. ; De Souza, M.M. ; Sverdloff, S. ; Narayanan, E.M.S.
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
Abstract :
In this paper, the performance of a 25 A 1.7 kV non punch through clustered insulated gate bipolar transistor, fabricated under a manufacturing environment is highlighted. In particular, the influence of the design parameters such as cathode cell spacing and cluster spacing on device performance is studied experimentally and the results are discussed.
Keywords :
insulated gate bipolar transistors; power transistors; semiconductor device measurement; 1.7 kV; 25 A; NPT CIGBT; cathode cell spacing; cluster spacing; non punch through CIGBT; planar clustered insulated gate bipolar transistor; Insulated gate bipolar transistors; Power transistors;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332917
