Over 55kV/μs, dv/dt turn-off characteristics of 4kV-static induction thyristor for pulsed power applications

Over 55 kV/μs, high voltage rise-up rated pulses have been successfully applied between the anode and the cathode of a 4 kV/300 A static induction thyristor (SIThy) during turn-off actions by applying the induction energy storage (IES) circuit invented in 2002 (K. Iida et al., 15th Symp. of Static Induction Devices, SSID-02-9, p.45-50, 2002). SIThys were destroyed when the high dv/dt value, over 2 kV/μs, was applied in the forward direction between the anode and the cathode during the turn-off action, by the conventional opening switching technique. We simulated the electric field strength inside of the SIThy on the IES circuit; consequently the electric field applied in front of the n-emitter during the turn-off action is absolutely low. This is considered to be the reason of the high tolerance for "turn-off dv/dt" of SIThys using the IES circuit.