Title :
Influence of temperature and doping parameters on the performance of segmented anode NPN (SA-NPN) LIGBT
Author :
Green, David W. ; Hardikar, S. ; Sweet, M. ; Vershinin, K. ; Tadikonda, R. ; De Souza, M.M. ; Narayanan, E. M Sankara
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
Abstract :
An ultra-high performance SA-NPN anode LIGBT is presented. In contrast to other structures, the SA-NPN offers controllability of the device characteristics at the design stage through a simple variation in the ratio of NPN/P+ widths. The performance advantages of the SA-NPN LIGBT in comparison to a conventional structure at both room and elevated temperatures clearly demonstrate that the SA-NPN is one of the best in the class of anode engineering for lateral power devices.
Keywords :
doping profiles; insulated gate bipolar transistors; power transistors; NPN/P+ region width ratio; SA-NPN anode LIGBT; anode engineering; doping parameter effects; lateral power devices; segmented anode LIGBT; temperature effects; ultra-high performance LIGBT; Insulated gate bipolar transistors; Power transistors;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332921
