• DocumentCode
    3417015
  • Title

    Low voltage low power CMOS design techniques for deep submicron ICs

  • Author

    Wei, Liqiong ; Roy, Kaushik ; De, Vivek K.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    24
  • Lastpage
    29
  • Abstract
    Due to the quadratic reduction in the switching power dissipation, lowering supply voltage is obviously one of the most effective ways to reduce power consumption. However, the performance will degrade. In order to satisfy the high performance requirements, threshold voltage has to be scaled. Unfortunately, such scaling leads to a dramatic increase in leakage current, which becomes a new concern for low voltage and high performance circuit designs. Multiple transistor threshold and supply voltages can be used to achieve low power and high performance while maintaining low leakage current. In this tutorial, different multiple-Vth, multiple-Vdd and standby leakage control techniques are presented
  • Keywords
    CMOS integrated circuits; VLSI; integrated circuit design; leakage currents; low-power electronics; LV low power CMOS design techniques; deep submicron ICs; high performance requirements; low leakage current; low voltage CMOS design; multiple supply voltage techniques; multiple transistor threshold techniques; standby leakage control techniques; supply voltage reduction; switching power dissipation reduction; threshold voltage scaling; CMOS technology; Circuit synthesis; Degradation; Energy consumption; Leakage current; Low voltage; Power dissipation; Subthreshold current; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, 2000. Thirteenth International Conference on
  • Conference_Location
    Calcutta
  • ISSN
    1063-9667
  • Print_ISBN
    0-7695-0487-6
  • Type

    conf

  • DOI
    10.1109/ICVD.2000.812579
  • Filename
    812579