DocumentCode
3417015
Title
Low voltage low power CMOS design techniques for deep submicron ICs
Author
Wei, Liqiong ; Roy, Kaushik ; De, Vivek K.
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2000
fDate
2000
Firstpage
24
Lastpage
29
Abstract
Due to the quadratic reduction in the switching power dissipation, lowering supply voltage is obviously one of the most effective ways to reduce power consumption. However, the performance will degrade. In order to satisfy the high performance requirements, threshold voltage has to be scaled. Unfortunately, such scaling leads to a dramatic increase in leakage current, which becomes a new concern for low voltage and high performance circuit designs. Multiple transistor threshold and supply voltages can be used to achieve low power and high performance while maintaining low leakage current. In this tutorial, different multiple-Vth, multiple-Vdd and standby leakage control techniques are presented
Keywords
CMOS integrated circuits; VLSI; integrated circuit design; leakage currents; low-power electronics; LV low power CMOS design techniques; deep submicron ICs; high performance requirements; low leakage current; low voltage CMOS design; multiple supply voltage techniques; multiple transistor threshold techniques; standby leakage control techniques; supply voltage reduction; switching power dissipation reduction; threshold voltage scaling; CMOS technology; Circuit synthesis; Degradation; Energy consumption; Leakage current; Low voltage; Power dissipation; Subthreshold current; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, 2000. Thirteenth International Conference on
Conference_Location
Calcutta
ISSN
1063-9667
Print_ISBN
0-7695-0487-6
Type
conf
DOI
10.1109/ICVD.2000.812579
Filename
812579
Link To Document