3D parallel full band ensemble Monte Carlo devices simulation for nano scale devices application

A 3D parallel full band ensemble Monte Carlo device simulator is developed for simulation of nano scale semiconductor devices especially for the non planar structures. The transition rates for the various scattering processes including phonon scattering, ionized impurity scattering, remote Coulomb scattering, surface roughness scattering and surface phonon scattering are calculated based on Fermi´s golden rule. The quantum effect, quantum correction has been included using the effective potential (EP) method. 3D Poisson equation with non uniform hexahedron grid is solved self-consistently after the carriers´ free flight and scattering. We parallelize the 3D MC device simulator by utilizing the Trillions software package.