Title :
A novel ultra high voltage 4H-SiC bipolar device: MAGBT
Author :
Asano, K. ; Sugawara, Y. ; Nakayama, K.
Author_Institution :
Power Eng. R&D Center, Kansai Electr. Power Co., Amagasaki, Japan
Abstract :
A novel normally-off SiC MOS accumulated channel gate bipolar transistor, called MAGBT, with a high blocking voltage is proposed for high voltage applications. This MAGBT can be expected to realize a high blocking voltage and a low on-state voltage drop. Even if the blocking voltage is greater than 20 kV, the on-state voltage drop at 100 A/cm2 can be expected to be less than 6.5 V. Furthermore, high safety against latch up can be expected.
Keywords :
power bipolar transistors; silicon compounds; wide band gap semiconductors; 20 kV; 4H-SiC bipolar device; 6.5 V; MOS accumulated channel gate bipolar transistor; SiC; high blocking voltage device; high voltage applications; latch up immunity; low on-state voltage drop; normally-off MAGBT; ultra high voltage MAGBT; Power bipolar transistors; Silicon compounds;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332926
