Title :
A double channel normally-off SiC JFET device with ultra-low on-state resistance
Author :
Udrea, F. ; Mihaila, A. ; Rashid, S.J. ; Amaratunga, G.A.J. ; Takeuchi, Y. ; Kataoka, M. ; Malhan, R.K.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
In this paper we report a novel ´all-epitaxial´ 1.2 kV normally-off JFET featuring a double channel to improve considerably the specific on-state resistance. The device relies on a succession of n and p+ stripes in the channel/gate region. A 30% reduction in the on-resistance is obtained when compared to a standard single channel normally-off JFET. Depending on the structure considered, the unipolar value of the specific on-state resistance for a 1.2 kV device is below 3 mΩcm2.
Keywords :
junction gate field effect transistors; power field effect transistors; 1.2 kV; SiC; all-epitaxial JFET; channel/gate region n/p+ stripes; double channel normally-off JFET; specific on-state resistance; ultra-low on-state resistance; unipolar resistance value; JFETs; Power FETs;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332927
