Title :
ZnO nanorod array based optoelectronic device with graphene as transparent electrode
Author :
Ting-Ting Feng ; Dan Xie ; Hai-Ming Zhao ; Tian-Ling Ren
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol. (TNList), Tsinghua Univ., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The ZnO nanorod array (ZNA) for optoelectronic device application was prepared by hydrothermal method with Zn film as the seed layer. Large area graphene film was synthesized by chemical vapor deposition method and shows good transparency and conductivity, which is very suitable for the application of transparent conductive electrode (TCE). The graphene/ZNA/silicon device was fabricated and the photoelectrical characteristics were studied, demonstrating the feasibility of graphene used as TCE in ZNA based optoelectronic devices.
Keywords :
chemical vapour deposition; graphene; nanorods; optoelectronic devices; silicon; zinc compounds; TCE; chemical vapor deposition method; graphene-ZNA-silicon device; hydrothermal method; large-area graphene film; optoelectronic device; photoelectrical characteristics; transparent conductive electrode; zinc film; zinc oxide nanorod array; Electrodes; Films; Graphene; Optoelectronic devices; Silicon; Substrates; Zinc oxide;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467683
