Device degradation in n- and p-channel polysilicon TFTs as a function of different electrical stress configurations

Author

Suntharalingam, Vyshnavi ; Fonash, Stephen J. ; Awadelkarim, Osama O.

Author_Institution

Electron. Mater. & Processing Res. Lab., Pennsylvania State Univ., University Park, PA, USA

fYear

1995

fDate

25-26 Sep 1995

Firstpage

115

Lastpage

118

Abstract

Electrical stress testing of polysilicon TFTs is a very valuable tool for addressing concerns about device reliability and stability. We have examined two distinct bias stresses on ECR and RF hydrogenated polysilicon TFTs and have compared the degradation mechanisms in n- and p-channel devices. We present evidence that hydrogen motion can play a role in TFT response to these stresses and show that the response can be very different for n- and p-channel TFTs

Keywords

crystal defects; elemental semiconductors; hot carriers; hydrogen; plasma applications; plasma radiofrequency heating; semiconductor device reliability; semiconductor device testing; semiconductor doping; semiconductor technology; silicon; thin film transistors; ECR; RF hydrogenated polysilicon TFT; Si:H; TFT response; bias stress; device degradation; electrical stress; hydrogen motion; n-channel polysilicon TFT; p-channel polysilicon TFT; reliability; stability; testing; Degradation; Dielectric devices; Hot carriers; Hydrogen; Laboratories; Radio frequency; Silicon; Stress; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., Second International Workshop on

Conference_Location

Bethlehem, PA

Print_ISBN

0-7803-3056-0

Type

conf

DOI

10.1109/AMLCD.1995.540971

Filename

540971