Title :
An ultra-low Rons in 4H-SiC vertical MOSFET: buried channel double-epitaxial MOSFET
Author :
Harada, Shinsuke ; Okamoto, Mitsuo ; Yatsuo, Tsutomu ; Adachi, Kazuhiro ; Fukuda, Kenji ; Arai, Kazuo
Author_Institution :
Power Electron. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
This study developed a novel 4H-SiC vertical MOSFET device structure, named double-epitaxial MOSFET (DEMOSFET). In the structure, the p-well is composed of two p-type epitaxial layers, while an n-type region between the p-wells is formed by low-dose n-type ion implantation. A buried channel is formed at the surface of the upper p- epitaxial layer. A fabricated DEMOSFET showed an on-resistance of 8.5 mΩcm2 at a gate voltage of 15 V when the blocking voltage is 600 V. The simulation results revealed that the characteristics largely depend on the profile of the nitrogen in the n-type region between the p-wells.
Keywords :
doping profiles; ion implantation; power MOSFET; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 15 V; 4H-SiC vertical MOSFET; 600 V; DEMOSFET; SiC; blocking voltage; buried channel double-epitaxial MOSFET; inter p-well n-type region doping profile; low-dose n-type ion implantation; p-type epitaxial layers; ultra-low on-resistance; Ion implantation; Power MOSFETs; Semiconductor epitaxial layers; Silicon compounds;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332928
