Title :
Graphene nanoelectronics: Overview from post-silicon perspective
Author_Institution :
Coll. of Nanoscale Sci. & Eng., State Univ. of New York, Albany, NY, USA
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Since its discovery in 2004, graphene, a two-dimensional (2D) crystal of sp2-bonded carbon arranged in a honeycomb lattice, has rapidly emerged as an intriguing material for a broad spectrum of applications in nano-devices. Given its exceptional carrier transport characteristics, excellent thermal conductivity, and robust electro-mechanical behavior, graphene could be potentially used in applications such as radio-frequency transistors, “post-copper” on-chip interconnects, transparent electrodes, sensors, and flexible/3D carbon electronics.
Keywords :
graphene; nanoelectronics; thermal conductivity; transport processes; C; carrier transport characteristics; electro-mechanical behavior; graphene nanoelectronics; honeycomb lattice; nanodevices; post silicon perspective; thermal conductivity; two-dimensional crystal; Boron; Carbon; Graphene; Integrated circuit interconnections; Photonic band gap; Substrates; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467685