• DocumentCode
    3417129
  • Title

    Design and fabrication of SiC MESFET transistor and broadband power amplifier for RF applications

  • Author

    Chen, P. ; Chang, H.-R. ; Li, X. ; Luo, Ben

  • Author_Institution
    Rockwell Sci. Center, USA
  • fYear
    2004
  • fDate
    24-27 May 2004
  • Firstpage
    317
  • Lastpage
    318
  • Abstract
    A SiC MESFET package and a prototype power amplifier module were demonstrated with P1dB output power of 26 W and 35 W, respectively. High power and high power gain were maintained through 950 MHz to 1500 MHz L-band operation across 500 MHz bandwidth for the SiC PA module, which is a critical challenge to other semiconductor devices.
  • Keywords
    UHF power amplifiers; modules; power MESFET; wideband amplifiers; 10 dB; 26 W; 35 W; 50 V; 500 MHz; 950 to 1500 MHz; L-band operation; MESFET package; PA module; RF broadband power amplifier; SiC; Broadband amplifiers; Power MESFETs; UHF power amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
  • Print_ISBN
    4-88686-060-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2004.1332929
  • Filename
    1332929
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3417129