Title :
Design and fabrication of SiC MESFET transistor and broadband power amplifier for RF applications
Author :
Chen, P. ; Chang, H.-R. ; Li, X. ; Luo, Ben
Author_Institution :
Rockwell Sci. Center, USA
Abstract :
A SiC MESFET package and a prototype power amplifier module were demonstrated with P1dB output power of 26 W and 35 W, respectively. High power and high power gain were maintained through 950 MHz to 1500 MHz L-band operation across 500 MHz bandwidth for the SiC PA module, which is a critical challenge to other semiconductor devices.
Keywords :
UHF power amplifiers; modules; power MESFET; wideband amplifiers; 10 dB; 26 W; 35 W; 50 V; 500 MHz; 950 to 1500 MHz; L-band operation; MESFET package; PA module; RF broadband power amplifier; SiC; Broadband amplifiers; Power MESFETs; UHF power amplifiers;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332929
