DocumentCode :
3417153
Title :
High sampling rate 1 GS/s current mode pipeline ADC in 90 nm Si-CMOS process
Author :
Tanifuji, Shoichi ; Ando, K. ; Tuan Thanh Ta ; Kameda, Suguru ; Suematsu, Noriharu ; Takagi, Toshiyuki ; Tsubouchi, Kazuo
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear :
2011
fDate :
24-25 Aug. 2011
Firstpage :
1
Lastpage :
4
Abstract :
We verified possibility of high sampling rate and lower power consumption current mode ADC that focused on the most high-speed operation for millimeter-wave broad-band wireless terminal such as wireless personal area network (WPAN). A 5 bit 1 giga-samples-per-second (GS/s) current mode pipeline ADC has been designed and fabricated in 90 nm Si complementary metal oxide semiconductor (CMOS) process. The fabricated ADC has no miscode and increases monotonically. In addition, differential non linearity (DNL) is less than 1.0 and integral non linearity (INL) is less than 1.25, power consumption is 52.8mW on 1 GS/s.
Keywords :
CMOS integrated circuits; MIMIC; analogue-digital conversion; current-mode circuits; elemental semiconductors; silicon; ADC; Si; Si-CMOS process; WPAN; current mode pipeline ADC; differential nonlinearity; high-speed operation; integral nonlinearity; millimeter-wave broad-band wireless terminal; power 52.8 mW; size 90 nm; wireless personal area network; word length 5 bit; Silicon; Substrates; Switches; Wireless personal area networks; ADC; Current Mode; Heterogeneous; Pipeline; Si-CMOS;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Intelligent Radio for Future Personal Terminals (IMWS-IRFPT), 2011 IEEE MTT-S International Microwave Workshop Series on
Conference_Location :
Daejeon
Print_ISBN :
978-1-4577-0961-6
Electronic_ISBN :
978-1-4577-0963-0
Type :
conf
DOI :
10.1109/IMWS2.2011.6027168
Filename :
6027168
Link To Document :
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