Title :
Soft errors in advanced CMOS technologies
Author :
Schrimpf, R.D. ; Alles, M.A. ; Mamouni, F.E. ; Fleetwood, D.M. ; Weller, Robert A. ; Reed, R.A.
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Soft errors produced by ionizing radiation pose significant challenges for integrated circuits and electronic devices. The challenges and solutions change significantly as feature sizes become smaller and device topologies change. This paper reviews soft errors in advanced electronics, with emphasis on highly scaled CMOS technologies.
Keywords :
CMOS integrated circuits; ionisation; network topology; radiation hardening (electronics); advanced CMOS technology; electronic device; integrated circuit; ionizing radiation; soft error; topology device; CMOS integrated circuits; CMOS technology; Error analysis; FinFETs; Logic gates; Substrates; Transient analysis;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467689
