Title :
1200V FS-IGBT module with enhanced dynamic clamping capability
Author :
Otsuki, M. ; Onozawa, Y. ; Yoshiwatari, S. ; Seki, Y.
Author_Institution :
Fuji Hitachi Power Semicond. Co., Ltd, Matsumoto, Japan
Abstract :
This paper describes the design concept to realize IGBT modules with large surge capability without any protection, such as gate controlled soft-turn-off and/or gate clamping zeners, especially focused on the large capacity fast switching FS (field-stop) IGBT modules. A 1200 V 450 A trench FS-IGBT module, which is designed to have optimum clamping voltage, has been able to obtain 6 μsec-long UIS clamping turn off capability from two times larger current than its rating. Furthermore, the device survived after a 10 μsec short-circuit followed by 2.5 μsec clamping.
Keywords :
insulated gate bipolar transistors; modules; power transistors; 10 mus; 1200 V; 2.5 mus; 450 A; 6 mus; UIS clamping turn off capability; clamping voltage; dynamic clamping capability; fast switching field-stop IGBT modules; protection-less surge capability; trench FS-IGBT module; Insulated gate bipolar transistors; Power transistors;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332938
