DocumentCode
3417309
Title
A low-noise low-power CMOS RF front end for 5-GHz wireless LAN receiver
Author
Cheng, Wei ; Li, Zhiqun ; Wang, Zhigong
Author_Institution
Inst. of RF- & OE- ICs, Southeast Univ., Nanjing, China
Volume
5
fYear
2005
fDate
4-7 Dec. 2005
Abstract
In this paper, the design considerations and simulation results of a low-noise low-power radio frequency front end for 5-GHz WEAN receiver, which includes a low-noise amplifier and a downconversion mixer, are presented. Fabricated in 0.18-μm CMOS technology, the front end achieves a noise figure of 1.4 dB, and a power gain of 28.4 dB while dissipating 11.2 mA from a 1.8-V supply.
Keywords
CMOS integrated circuits; integrated circuit noise; local area networks; low noise amplifiers; low-power electronics; mixers (circuits); radio access networks; radio receivers; 0.18 micron; 1.8 V; 28.4 dB; 5 GHz; CMOS; WEAN receiver; downconversion mixer; front end achieves; low-noise amplifier; low-noise low-power radio frequency front end; noise figure; wireless LAN receiver; CMOS technology; Energy consumption; Inductors; MOSFETs; Noise figure; Noise measurement; Radio frequency; Receivers; Resistors; Wireless LAN;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN
0-7803-9433-X
Type
conf
DOI
10.1109/APMC.2005.1607072
Filename
1607072
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