DocumentCode
3417319
Title
Novel high power semiconductor module for trench IGBTs
Author
Stockmeier ; Manz, Yvonne ; Steger, Jurgen
Author_Institution
SEMIKRON Elektron. GmbH, Nuremberg, Germany
fYear
2004
fDate
24-27 May 2004
Firstpage
343
Lastpage
346
Abstract
A new high power IGBT module is presented here, which is particularly suited for devices with low forward voltage drop, such as the latest trench IGBTs. The module design is versatile to cover a power range from 190 A to 1000 A, to enable integrated drive and protection functions, and to address different circuit topologies. Its unique construction features are spring pins to the gate and emitter of each individual IGBT chip, the elimination of wire bonding to power terminals, and scalable subunits. This results in lower losses, better cooling, and optimized parallelling of chips and modules.
Keywords
insulated gate bipolar transistors; modules; power electronics; 190 to 1000 A; chip/module parallelling; cooling; gate/emitter spring pin connections; high power semiconductor module; integrated drive/protection functions; low forward voltage drop devices; lower losses; scalable subunits; trench IGBT; Insulated gate bipolar transistors; Power electronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN
4-88686-060-5
Type
conf
DOI
10.1109/ISPSD.2004.1332939
Filename
1332939
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