Title :
New generation metal base free IGBT module structure with low thermal resistance
Author :
Nishimura, Y. ; Mochizuki, E. ; Kikuchi, M. ; Nishizawa, T. ; Ikeda, Y. ; Takahashi, Y.
Author_Institution :
Fuji Hitachi Power Semicond. Co. Ltd, Matsumoto, Japan
Abstract :
Thermal resistance is one of the most important characteristics in the application of power semiconductors. This paper presents a new generation metal base free IGBT module structure with low thermal resistance. In the experimental results of our new product using the new metal base free structure, heat resistance is reduced by approximately 30% in comparison with the conventional structure. And we achieved improved mechanical strength and reliability characteristics. This was achieved by using a thick copper foil with our original thin zirconia doped alumina technology.
Keywords :
alumina; bonding processes; copper; insulated gate bipolar transistors; mechanical strength; power bipolar transistors; semiconductor device reliability; thermal resistance; zirconium compounds; Cu-Al2O3:ZrO2; DCB; direct copper bonding; improved mechanical strength; improved reliability; insulated gate bipolar transistor; light weight; low thermal resistance; metal base free IGBT structure; power semiconductors; thick copper foil; thin zirconia doped alumina; Aluminum compounds; Copper; Insulated gate bipolar transistors; Mechanical factors; Power bipolar transistors; Semiconductor device reliability; Thermoresistivity; Zirconium compounds;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332940
