Title :
4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation
Author :
Nakayama, K. ; Sugawara, Y. ; Tsuchida, H. ; Miyanagi, T. ; Kamata, I. ; Nakamura, T. ; Asano, K. ; Takayama, D.
Author_Institution :
Kansai Electr. Power Co., Inc, Hyogo, Japan
Abstract :
The dependence of a pin diode´s forward voltage degradation on device structures and crystal faces has been investigated. This investigation clarified for the first time that forward voltage degradation is reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High voltage 4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation have also been fabricated successfully. A pin diode´s highest breakdown voltage of 4.6 kV is achieved, and ΔVf reduces to 0.04 V.
Keywords :
crystal faces; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 0.04 V; 4.6 kV; 4H-SiC (000-1) C-face pin diodes; SiC; breakdown voltage; crystal face effects; diode forward voltage degradation; high voltage pin diodes; Power semiconductor diodes; Silicon compounds; p-i-n diodes;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332944
