DocumentCode
3417403
Title
4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation
Author
Nakayama, K. ; Sugawara, Y. ; Tsuchida, H. ; Miyanagi, T. ; Kamata, I. ; Nakamura, T. ; Asano, K. ; Takayama, D.
Author_Institution
Kansai Electr. Power Co., Inc, Hyogo, Japan
fYear
2004
fDate
24-27 May 2004
Firstpage
357
Lastpage
360
Abstract
The dependence of a pin diode´s forward voltage degradation on device structures and crystal faces has been investigated. This investigation clarified for the first time that forward voltage degradation is reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High voltage 4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation have also been fabricated successfully. A pin diode´s highest breakdown voltage of 4.6 kV is achieved, and ΔVf reduces to 0.04 V.
Keywords
crystal faces; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 0.04 V; 4.6 kV; 4H-SiC (000-1) C-face pin diodes; SiC; breakdown voltage; crystal face effects; diode forward voltage degradation; high voltage pin diodes; Power semiconductor diodes; Silicon compounds; p-i-n diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN
4-88686-060-5
Type
conf
DOI
10.1109/ISPSD.2004.1332944
Filename
1332944
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