12.7kV ultra high voltage SiC commutated gate turn-off thyristor: SICGT

Author

Sugawara, Y. ; Takayama, D. ; Asano, K. ; Agarwal, A. ; Ryu, S. ; Palmour, J. ; Ogata, S.

Author_Institution

Power Eng. R&D Center, Kansai Electr. Power Co., Amagasaki, Japan

fYear

2004

fDate

24-27 May 2004

Firstpage

365

Lastpage

368

Abstract

A novel 12.7 kV SiC SICGT (SiC commutated gate turn-off thyristor) was developed for on-line uses in power utility applications, which has the highest blocking voltage among the reported semiconductor switching devices. Its leakage current is low and is less than 1×10^-3 A/cm² at 9 kV and at 250°C. Its on-state voltage at 100 A/cm² is 6.6 V and is lower than that of a 9 kV Si GTO, which is composed of two 4.5 kV GTOs connected in series. Its turn-on time and turn-off time are 0.22 μs and 2.68 μs respectively, which are about 1/50 and 1/10 of a commercialized 6 kV 6 kA Si-GTO. A PWM half bridge inverter composed of SICGTs demonstrated an output voltage of ±1.25 kV and output power of 0.8 kVA respectively, which are the highest values among the reported SiC half bridge inverters.

Keywords

PWM invertors; leakage currents; thyristors; -1.25 to 1.25 kV; 0.22 mus; 0.8 kVA; 12.7 kV; 2.68 mus; 250 degC; 6.6 V; 9 kV; PWM half bridge inverter; SICGT; SiC; blocking voltage; commutated gate turn-off thyristor; leakage current; on-state voltage; power utility on-line device; turn-off time; turn-on time; ultra high voltage thyristor; Leakage currents; Pulse width modulated inverters; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332946

Filename

1332946