A new SJ VDMOS with an extended HK dielectric-filling trench

Author

Qi Wang ; Pei Wang ; Yong-Heng Jiang ; Kun Zhou ; Guo-Liang Yao ; Xiao-Rong Luo

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

A new super junction (SJ) VDMOS with an extended high permittivity (HK) dielectric-filling trench is proposed. A narrow N/P column in the SJ structure can be realized by using trench technology and angled ion implantation. The assistant depletion caused by the HK dielectric increases doping concentration of the N-drift region and thus reduces the specific on-resistance (R_on,sp). Furthermore, HK dielectric weakens the charge balance sensitivity to the N-drift doping. The HK dielectric also reshapes the electric field distribution so as to improve the breakdown voltage (BV). Blocking and on-state characteristics have been investigated by simulation. The HK trench SJ VDMOS reduces R_on,sp by 50% and increases BV by 12% compared with those of the conventional SJ VDMOS.

Keywords

doping profiles; electric breakdown; ion implantation; permittivity; N-drift doping; N-drift region; SJ VDMOS; SJ structure; angled ion implantation; assistant depletion; blocking characteristics; breakdown voltage; charge balance sensitivity; doping concentration; electric field distribution; extended HK dielectric-filling trench; extended high permittivity; narrow N/P column; on-state characteristics; specific on-resistance; super junction VDMOS; Dielectrics; Doping; Electric fields; Ion implantation; Materials; Permittivity; Sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467703

Filename

6467703