DocumentCode
3417503
Title
Power PiN diode model for PSPICE simulations
Author
Buiatti, Gustavo Malagoni ; Cappelluti, Federica ; Ghione, Giovanni
Author_Institution
Dipartimento di Elettronica, Politecnico di Torino, Turin
Volume
3
fYear
2005
fDate
6-10 March 2005
Firstpage
1911
Abstract
An accurate physics based model for power PiN diodes is derived and implemented as a subcircuit into the PSPICE circuit simulator. The model is based on an equivalent circuit representation of the base region, obtained by solving the ambipolar diffusion equation with the finite difference method. Good agreement is obtained by comparing the results of the proposed PiN diode model with experimental and simulated results taken from the literature
Keywords
SPICE; equivalent circuits; finite difference methods; p-i-n diodes; power engineering computing; power semiconductor diodes; PSPICE circuit simulation; ambipolar diffusion equation; equivalent circuit representation; finite difference method; power PiN diode model; Boundary conditions; Circuit simulation; Difference equations; Diodes; Equivalent circuits; Finite difference methods; Numerical models; Predictive models; SPICE; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
Conference_Location
Austin, TX
Print_ISBN
0-7803-8975-1
Type
conf
DOI
10.1109/APEC.2005.1453314
Filename
1453314
Link To Document