DocumentCode
3417523
Title
Study on reverse recovery characteristics of reverse-blocking IGBT applied in matrix converter
Author
Jia, Shuyun ; Tseng, K.J. ; Wang, Xiao
Author_Institution
Centre for Adv. Power Electron., Nanyang Technol. Univ.
Volume
3
fYear
2005
fDate
6-10 March 2005
Firstpage
1917
Abstract
In the last few decades, there has been considerable interest in AC to AC direct power conversion circuit known as matrix converter in the power electronics circle, but the commercial adoption of matrix converter is limited for the lack of suitable single power switches which is capable of blocking the voltages and conducting currents in both directions. Very recently, a new type of IGBT with reverse blocking capability is made available commercially. This RB-IGBT is similar to NPT-IGBT in geometry except for the modification mainly at the edges to enable continuous p+ n- blocking junction and proper termination. This paper presents experimental data on reverse recovery characteristics of the RB-IGBT under a wide variety of operation conditions. The results and analyses can be very useful to those who intend to use RB-IGBT in matrix converter and also in other converter topologies
Keywords
AC-AC power convertors; insulated gate bipolar transistors; matrix convertors; network topology; p-n junctions; power bipolar transistors; AC to AC direct power conversion circuit; converter topology; matrix converter; reverse recovery characteristic; reverse recovery characteristics; reverse-blocking IGBT; single power switches; Bidirectional control; Circuits; Diodes; Insulated gate bipolar transistors; Matrix converters; Power electronics; Pulse measurements; Switches; Virtual reality; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
Conference_Location
Austin, TX
Print_ISBN
0-7803-8975-1
Type
conf
DOI
10.1109/APEC.2005.1453315
Filename
1453315
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