Title :
Modeling of boron, phosphorus, and arsenic implants into single-crystal silicon over a wide energy range (few keV to several MeV)
Author :
Morris, S.J. ; Obradovic, B. ; Yang, S.-H. ; Tasch, A.F.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
In this paper is presented for the first time an accurate, physically based simulator for boron, arsenic, and phosphorus ion implantation covering a very wide range of energies from a few keV to several MeV. This wide range of energies, as well as on-axis and off-axis implantations, is covered by a single, comprehensive model. Combined with previously developed models for damage accumulation, this model allows physically-based simulation of 3-D profiles over an extremely wide range of implant conditions.
Keywords :
arsenic; boron; doping profiles; elemental semiconductors; energy loss of particles; ion implantation; phosphorus; semiconductor process modelling; silicon; 3-D profile simulation; Si:As; Si:B; Si:P; UT-MARLOWE; damage accumulation; electronic stopping model; inelastic loss; ion implantation modeling; off-axis implantation; on-axis implantation; physically based simulator; wide energy range; Boron; Electrons; Energy loss; Implants; Ion implantation; Ionization; Microelectronics; Polarization; Protons; Silicon;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554082
