Title :
A 12mW 5GHz wideband low-noise amplifier in 0.13µm CMOS using noise cancellation
Author :
Hyewon Kim ; Jiyoung Tak ; Jinju Lee ; Jihye Shin ; Jungwon Han ; Sung Min Park
Author_Institution :
Dept. of Electron. Eng., Ewha Womans Univ., Seoul, South Korea
Abstract :
This paper presents a wideband low-noise amplifier (LNA) exploiting noise cancellation technique, which operates at 800MHz-5.7GHz for low-power multi-standard applications. Implemented in a 0.13μm CMOS technology, the measured results of the LNA demonstrate the maximum gain of 11.7dB in the frequency range of 811MHz~5.7GHz, the noise figure of 2.58~5.11dB within the bandwidth, the input-referred third order intercept point (IIP3) of 1.6dBm at 2.4GHz, and the power consumption of 12mW from a single 1.2V supply. The chip occupies the total area of 0.7×0.9mm2.
Keywords :
CMOS integrated circuits; MMIC amplifiers; field effect MMIC; low noise amplifiers; wideband amplifiers; CMOS process; MMIC amplifiers; frequency 2.4 GHz; frequency 800 MHz to 5.7 GHz; gain 11.7 dB; noise cancellation; noise figure 2.58 dB to 5.11 dB; power 12 mW; size 0.13 mum; voltage 1.2 V; wideband low-noise amplifier; CMOS integrated circuits; Noise cancellation; Noise measurement; Power measurement; Wideband; CMOS; LNA; multi-standard; noise cancellation; wideband;
Conference_Titel :
Intelligent Radio for Future Personal Terminals (IMWS-IRFPT), 2011 IEEE MTT-S International Microwave Workshop Series on
Conference_Location :
Daejeon
Print_ISBN :
978-1-4577-0961-6
Electronic_ISBN :
978-1-4577-0963-0
DOI :
10.1109/IMWS2.2011.6027203
