Title :
Radiation detector readout circuit with two-stage charge sensitive amplifier
Author :
Ya-Cong Zhang ; Xiao-Lu Chen ; Wen-Gao Lu ; Zhong-Jian Chen
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A two-stage charge sensitive amplifier structure suitable for silicon radiation detector with large capacitance is proposed. It has the advantage that the integration capacitor can be large to reduce the gain sensibility to detector capacitance variation without any stability problem. The feasibility of the proposed circuit is verified by comparing the simulation results with the conventional one-stage charge sensitive amplifier. A prototype of 16-channel readout circuit for electron collection has been taped out in a 0.35μm CMOS technology with a power supply of 5V. The area is 2.5×1.54mm2 with 42 pads and the power dissipation is 60mW.
Keywords :
CMOS analogue integrated circuits; amplifiers; particle detectors; readout electronics; silicon; 16-channel readout circuit; CMOS technology; Si; detector capacitance variation; integration capacitor; one-stage charge sensitive amplifier; power 60 mW; power dissipation; radiation detector readout circuit; size 0.35 mum; two-stage charge sensitive amplifier structure; voltage 5 V; CMOS integrated circuits; Capacitance; Capacitors; Circuit stability; Detectors; Radiation detectors; Stability analysis;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467724
