Title :
Model design of non-volatile SRAM based on Magnetic Tunnel Junction
Author :
Kirubaraj, A. Alfred ; Emmanuel, A. Affum
Author_Institution :
Sch. of Electr. Sci., SRM Univ., Chennai, India
Abstract :
Recently there has been considerable interest in MTJ based MRAM because of its promising characteristics exhibiting high non-volatility combined with high density and radiation hardness as well as nondestructive readout (NDRO), very high radiation tolerance higher write/erase endurance compared to the FRAMs, and virtually unlimited power-off storage capability. This paper presents the design of static random access memory (SRAM) cell followed by MTJ that makes SRAM cell non-volatile, in which the output of SRAM cell having logic state 0 and 1 changes the direction of the moment of the free magnetic layer which is used for the information storage in MTJ device.
Keywords :
MRAM devices; SRAM chips; magnetic tunnelling; free magnetic layer; information storage; logic state; magnetic tunnel junction; nondestructive readout; nonvolatile SRAM; radiation hardness; radiation tolerance; write-erase endurance; CMOS logic circuits; CMOS technology; Flip-flops; Logic design; Magnetic devices; Magnetic separation; Magnetic tunneling; Nonvolatile memory; Random access memory; Voltage; MRAM; MTJ; SOC; SRAM; TMR;
Conference_Titel :
Adaptive Science & Technology, 2009. ICAST 2009. 2nd International Conference on
Conference_Location :
Accra
Print_ISBN :
978-1-4244-3522-7
Electronic_ISBN :
0855-8906
DOI :
10.1109/ICASTECH.2009.5409743
